Overview


History and Capabilities

Customer-Driven Approach

Systems-Level Expertise

Strategic Alliances

FMI in Review

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1976
  • Predecessor to FMI formed under FAI.
  • 1979
  • FMI formed as subsidiary of FAI.
  • 1980
  • First 16K DRAMs shipped.
  • FMI became subsidiary of Fujitsu Limited.
  • 1981
  • FMI shipped one million DRAMs a month.
  • 1982
  • Joint development agreement with Ungermann-Bass (UB Networks) signed.
  • 1984
  • Purchase of Gresham, Oregon site announced.
  • 1985
  • Fujitsu's electronic components business became part of FMI.
  • Joint development agreement with Sun Microsystems signed.
  • 1986
  • First prototype SPARC ® S-16 chips shipped to Sun Microsystems.
  • 1987
  • Membrane-type AT 101 standard keyboard introduced.
  • 1988
  • Second-generation SPARC processor introduced.
  • EtherStar Ethernet LAN controller named fastest in the industry.
  • SCSI II connectors introduced.
  • Gresham manufacturing plant opened.
  • 1989
  • High-volume production began at Gresham.
  • 1990
  • Embedded RISC processor introduced.
  • NICE (Network Interface Controller and Encoder/Decoder) introduced.
  • Low-profile notebook/laptop keyboard introduced.
  • PC memory card connector introduced.
  • Volume production of l Megabit DRAMs began at Gresham.
  • 1991
  • Third-generation SPARC processor shipped.
  • EtherCoupler Ethernet LAN controller with filters announced.
  • Next-generation telecommunications relay introduced.
  • Gresham produced more than three million chips a month.
  • 1992
  • Fujitsu Compound Semiconductor, Inc. formed.
  • PC-compatible Ethernet I/O card introduced.
  • Plasma-display panel for workstation applications introduced.
  • Controlled-impedance connector for high-frequency applications introduced.
  • Gresham produced more than four million chips a month.
  • 1993
  • ATM chip set introduced.
  • MicroSPARC II chip developed.
  • Pen-touch panel and pointing devices introduced.
  • Suzuka factory received ISO 9001 quality certification.
  • Gresham began producing 4-Megabit DRAMs.
  • 1994
  • .5 micron CMOS ASIC family introduced.
  • 64 Megabit SDRAM introduced.
  • Mie, Aizu-Wakamatsu and Iwate factories received ISO 9002 certifications.
  • Plug-and-play controller introduced.
  • 21-inch plasma-display panels installed in New York Stock Exchange.
  • 1995
  • .35 micron CMOS ASIC sample introduced.
  • 256-Megabit DRAM prototyped.
  • Gresham factory received ISO 9002 certification.
  • Expansion of Gresham facility announced.
  • 42-inch plasma-display panel introduced.
  • PC Card family introduced.
  • Sapphire graphics-accelerator card announced.

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